4 INCH C-PLANE(0001) SAPPHIRE WAFERS
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China Ropa mujer
Ropa mujer

4 INCH C-PLANE(0001) SAPPHIRE WAFERS

Wafer saphir is being used extensively as a substrate for III-V nitrides and for many other epitaxial films. We supply 99.999% high purity sapphire wafers with an excellent surface finish to meet your rigorous requirements.

Specifications of 4 Inch C-plane(0001) Sapphire Wafer

Item

4-inch C-plane(0001) 650μm Sapphire Wafers

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Grade

Prime, Epi-Ready

Surface Orientation

C-plane(0001)

C-plane off-angle toward M-axis 0.2 +/- 0.1°

Diameter

100.0 mm +/- 0.1 mm

Thickness

650 μm +/- 25 μm

Primary Flat Orientation

A-plane(11-20) +/- 0.2°

Primary Flat Length

30.0 mm +/- 1.0 mm

Single Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(SSP)

Back Surface

Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished

Front Surface

Epi-polished, Ra < 0.2 nm (by AFM)

(DSP)

Back Surface

Epi-polished, Ra < 0.2 nm (by AFM)

TTV

< 20 μm

BOW

< 20 μm

WARP

< 20 μm

Cleaning / Packaging

Class 100 cleanroom cleaning and vacuum packaging,

25 pieces in one cassette packaging or single piece packaging.

Note: Custom c axis sapphire with any orientation and any thickness can be provided.

If you want to know more about custom sapphire optics, please contact us.

Ubicación : No. 49, Jiefang East Road, Shanyang District, JIAOZUO 454000, HENAN, CHINA, 454000 Jiaozuo,
Persona a contactar : Zhu Wind, +86 0391 393 3936

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4 INCH C-PLANE(0001) SAPPHIRE WAFERS

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