Bienes de equipo

Vacuum silicon carbide sintering furnace

Main technical data of Vacuum silicon carbide sintering furnace

Model

Effective working

dimension

mm(Φ×H)

Max

temperature

(℃)

Ultimate

pressure

(Pa)

Pressure

rising rate

(Pa/h)

IF

power

(KW)

IF frequency

(HZ)

Temperature

Uniformity

(℃)

RHIS-160

500×800

2400

7×10-1

1.5

160

2000

±10

RHIS-250

650×800

2400

7×10-1

1.5

250

2000

±10

RHIS-350

900×1200

2400

7×10-1

2

350

1500

±10

RHIS-500

1200×1500

2400

7×10-1

2

500

1500

±10

RHIS-750

1500×2000

2400

7×10-1

2

750

1000

±10


The working principle of the equipment is under the condition of vacuum or protective atmosphere, using the method of medium frequency induction heat the graphite heating body placed in the induction heating coil,then the graphite heating body produces high temperature and radiate to the workpiece and make it to the required temperature.

It is mainly used in new materials silicon carbide reaction sintering.

Sintering temperature up to 2500 ℃. It is mainly composed by Latex system, dust removal system, rapid cooling system (special air duct), the heating chamber, vacuum system and heating system, etc.

It has vertical, horizontal, bottom three types.

Ubicación : Room 502,NO.1299 New Jinqiao Road, Pudong New Area, Shanghai, China, 201206 ShangHai,
Persona a contactar : Kevin Liu, 0086 21 50878190

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